INELASTIC ELECTRON RESONANT TUNNELING THROUGH A DOUBLE-BARRIER NANOSTRUCTURE

被引：41

作者：

ZOU, NZ

CHAO, KA

机构：

[1] Division of Physics, Norwegian Institute of Technology, University of Trondheim

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.69.3224

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The inelastic scattering effect on electron tunneling through a double-barrier resonant tunneling device has been studied with a cumulant expansion on the electron transmission probability and the I-V characteristics using the Frohlich Hamiltonian which allows electron recoil. The low-order expansion formula used for numerical calculation satisfies a sum rule; its analytical derivation is given here for the first time. As the Fermi energy in the emitting lead is increased, electron recoil enhances the incoherence process and so broadens the phonon replica, which is also shifted towards the main peak. When the Fermi energy reaches the LO-phonon energy, the phonon replica and the main peak merge into one.

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页码：3224 / 3227

页数：4

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