OXYGEN-UPTAKE OF OBLIQUELY DEPOSITED GE FILMS

被引：13

作者：

MA, W ^{[1
]}

ANDERSON, RM ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 02期

关键词：

D O I：

10.1063/1.1655395

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：101 / 103

页数：3

共 12 条

[1] TETRAGONAL GERMANIUM DIOXIDE LAYERS ON GERMANIUM [J].

ALBERS, WA ;

VALYOCSIK, EW ;

MOHAN, PV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (2P1) :196-+

[2] PHOTOVOLTAGES IN SILICON AND GERMANIUM LAYERS [J].

KALLMANN, H ;

KRAMER, B ;

HAIDEMENAKIS, E ;

MCALEER, WJ ;

BARKEMEYER, H ;

POLLAK, PI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (03) :247-251

[3] PHOTOVOLTAGES LARGER THAN BAND GAP IN THIN-FILMS OF GERMANIUM [J].

KALLMANN, H ;

SPRUCH, GM ;

TRESTER, S .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :469-&

[4]

KONOROV PP, 1964, SOV PHYS-SOL STATE, V6, P55

[5]

NAKAI J, 1962, OYO BUTURI, V31, P310

[6]

NIEUWENHUIZEN JM, 1966, PHILIPS TECH REV, V6, P87

[7]

OBUKHOVDENISOV VV, 1960, OPT SPECTROSC, V8, P267

[8] OBLIQUE-INCIDENCE ANISOTROPY IN EVAPORATED PERMALLOY FILMS [J].

SMITH, DO ;

COHEN, MS ;

WEISS, GP .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) :1755-1762

[9] HARD MAGNETIC FILMS OF IRON COBALT AND NICKEL [J].

SPELIOTI.DE ;

BATE, G ;

ALSTAD, JK ;

MORRISON, JR .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (3P2) :972-&

[10] RESISTIVITY AND DENSITY OF GE FILMS OBLIQUELY DEPOSITED IN VACUUM [J].

TAKAHASHI, M ;

ONISHI, H ;

TADA, O .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) :833-+

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