HOT-CARRIER DRIFTS IN SUBMICROMETER P-CHANNEL MOSFETS

[1] CHANNEL-IMPLANT DOSE DEPENDENCE OF HOT-CARRIER GENERATION AND INJECTION IN SUBMICROMETER BURIED-CHANNEL PMOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) : 1685 - 1687

[2] KOYANAGI M, 1986, 18TH C SOL STAT DEV, P475

[3] LAU F, 1986, 5TH P INT S SIL MAT, P606

[4] EFFECTS OF HOT-CARRIER TRAPPING IN N-CHANNEL AND P-CHANNEL MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) : 871 - 876

[5] Schutz A., 1982, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, VCAD-1, P77, DOI 10.1109/TCAD.1982.1269997

[6] COMPARISON OF CHARACTERISTICS OF N-CHANNEL AND P-CHANNEL MOSFETS FOR VLSIS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (06) : 675 - 680

[7] TWO-DIMENSIONAL NUMERICAL-SIMULATION OF IMPURITY REDISTRIBUTION IN VLSI PROCESSES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1479 - 1483

[8] HOT-CARRIER-INDUCED DEGRADATION IN P-CHANNEL LDD MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) : 5 - 7

[9] Weber W., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P390

[1] CHANNEL-IMPLANT DOSE DEPENDENCE OF HOT-CARRIER GENERATION AND INJECTION IN SUBMICROMETER BURIED-CHANNEL PMOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) : 1685 - 1687

[2] KOYANAGI M, 1986, 18TH C SOL STAT DEV, P475

[3] LAU F, 1986, 5TH P INT S SIL MAT, P606

[4] EFFECTS OF HOT-CARRIER TRAPPING IN N-CHANNEL AND P-CHANNEL MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) : 871 - 876

[5] Schutz A., 1982, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, VCAD-1, P77, DOI 10.1109/TCAD.1982.1269997

[6] COMPARISON OF CHARACTERISTICS OF N-CHANNEL AND P-CHANNEL MOSFETS FOR VLSIS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (06) : 675 - 680

[7] TWO-DIMENSIONAL NUMERICAL-SIMULATION OF IMPURITY REDISTRIBUTION IN VLSI PROCESSES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1479 - 1483

[8] HOT-CARRIER-INDUCED DEGRADATION IN P-CHANNEL LDD MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (01) : 5 - 7

[9] Weber W., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P390