OPTICAL CONSTANTS OF AMORPHOUS SILICON FILMS NEAR MAIN ABSORPTION EDGE

被引:36
作者
GRIGOROVICI, R
VANCU, A
机构
[1] Institute of Physics of the Academy, Bucharest
关键词
D O I
10.1016/0040-6090(68)90016-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The spectral dependence of the optical constants of amorphous silicon films near the main absorption edge shows that the energy band structure of crystalline silicon is essentially conserved after amorphization, but the absorption coefficient corresponding to indirect transitions is much increased. This is attributed to the structural disorder reigning in amorphous silicon. © 1968.
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页码:105 / +
页数:1
相关论文
共 18 条
[1]  
Bardeen J., 1956, PHOT C NEW YORK, P146
[2]  
BARNA A, 1965, P COLLOQ THIN FILMS, P49
[3]  
COTTON P, 1950, J PHYS RADIUM, V11, P37
[4]   INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].
DASH, WC ;
NEWMAN, R .
PHYSICAL REVIEW, 1955, 99 (04) :1151-1155
[5]   INFRA-RED ABSORPTION IN SEMICONDUCTORS [J].
FAN, HY .
REPORTS ON PROGRESS IN PHYSICS, 1956, 19 :107-155
[6]   OPTICAL PROPERTIES OF THIN GERMANIUM FILMS IN WAVELENGTH RANGE 2000-6000 A [J].
GRANT, PM ;
PAUL, W .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) :3110-&
[7]   Reflection and thinner metal layer permeability [J].
Koller, K. .
ZEITSCHRIFT FUR PHYSIK, 1938, 110 (11-12) :661-+
[8]  
LISITSA MP, 1959, OPT SPEKTROSK+, V7, P552
[9]   INFRARED ABSORPTION OF SILICON NEAR THE LATTICE EDGE [J].
MACFARLANE, GG ;
ROBERTS, V .
PHYSICAL REVIEW, 1955, 98 (06) :1865-1866
[10]   INFRARED ABSORPTION OF GERMANIUM NEAR THE LATTICE EDGE [J].
MACFARLANE, GG ;
ROBERTS, V .
PHYSICAL REVIEW, 1955, 97 (06) :1714-1716