DEFECTS INDUCED BY DEEP DIFFUSION OF PHOSPHORUS INTO SILICON

被引：5

作者：

YUKIMOTO, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1969年 / 8卷 / 05期

关键词：

D O I：

10.1143/JJAP.8.568

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：568 / &

共 34 条

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[5]

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[8]

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