DETECTION OF 10-20 KEV H+, HE+ IONS AND ELECTRONS BY PLANAR OXIDE PASSIVATED AND ION-IMPLANTED SILICON DIODES

被引：6

作者：

JOHANSEN, GA ^{[1
]}

STADSNES, J ^{[1
]}

SORAAS, F ^{[1
]}

HANSEN, TE ^{[1
]}

机构：

[1] AME,N-3191 HORTEN,NORWAY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 62卷 / 01期

关键词：

D O I：

10.1016/0168-583X(91)95944-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A low noise UV-enhanced silicon photodiode has been modified into a low energy particle detector by removing the antireflection oxide layer. The electronic noise of a 100 mm2 device and a conventional charge sensitive preamplifier has been measured to 2.3 keV FWHM at room temperature operation. The response of this detector to low energy particles has been investigated. Electrons with 10 keV initial energy looses 0,8 keV in the surface deadlayer. Further, the sum of the energy losses in the deadlayer and to nuclear collisions have been measured to about 3.8 keV for 10 keV protons and 5.4 keV for 12 keV He+ ions.

引用

页码：162 / 166

页数：5

共 12 条

[1]

[Anonymous], 1977, STOPPING RANGES IONS

[2] MEASUREMENT OF ULTRATHIN WINDOWS OF ION-IMPLANTED SILICON DETECTORS WITH LOW-ENERGY PROTON-BEAMS [J].