EFFECT OF STRESS ON ELECTRON RELAXATION TIMES IN N-TYPE SILICON

被引：4

作者：

LOGGINS, CD

LITTLEJOHN, MA

机构：

来源：

关键词：

D O I：

10.1063/1.1660107

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：865 / +

页数：1

共 8 条

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[5] LOGGINS CD, 1970, THESIS N CAROLINA ST
[6] SCATTERING OF CONDUCTION ELECTRONS BY LATTICE VIBRATIONS IN SILICON
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[8] NEURINGER LJ, 1964, INT C PHYSICS SEMICO