MICROSTRUCTURE OF SIC PREPARED BY CHEMICAL VAPOR-DEPOSITION

被引：29

作者：

SHINOZAKI, SS ^{[1
]}

SATO, H ^{[1
]}

机构：

[1] PURDUE UNIV,MAT ENGN,W LAFAYETTE,IN 47907

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1978年 / 61卷 / 9-10期

关键词：

D O I：

10.1111/j.1151-2916.1978.tb09352.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：425 / 429

页数：5

共 21 条

[11]

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[13] DIRECT OBSERVATION AND IDENTIFICATION OF LONG-PERIOD STRUCTURES OF SIC BY TRANSMISSION ELECTRON-MICROSCOPY [J].

SATO, H ;

SHINOZAK.S ;

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[14] ONE-DIMENSIONALLY DISORDERED STRUCTURE AND POLYTYPISM IN SIC [J].

SATO, H ;

SHINOZAKI, S .

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[15]

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[16] ASPECTS OF ONE DIMENSIONAL DISORDER IN SILICON-CARBIDE [J].

SHINOZAKI, S ;

KINSMAN, KR .

ACTA METALLURGICA, 1978, 26 (05) :769-776

[17] RECRYSTALLIZATION AND PHASE-TRANSFORMATION IN REACTION-SINTERED SIC [J].

SHINOZAKI, SS ;

NOAKES, JE ;

SATO, H .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1978, 61 (5-6) :237-242

[18] TWIN MORPHOLOGY IN SILICON-CARBIDE WHISKERS [J].

STEVENS, R .

JOURNAL OF MATERIALS SCIENCE, 1972, 7 (06) :723-&

[19] GROWTH FAULTS IN BETA SILICON CARBIDE WHISKERS [J].

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JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) :1849-&

[20]

WEISS JR, 1974, SILICON CARBIDE 1973, P80

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