RECOMBINATION PROCESSES IN P-TYPE INDIUM ANTIMONIDE

[11] AUGER EFFECT IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 73 - 75

[12] LANDSBERG PT, 1957, P PHYS SOC LONDON B, V70, P283

[13] LAX M, 1959, J PHYS CHEM SOLIDS, V8, P166

[14] LAX M, 1956, B AM PHYS SOC, V1, P128

[15] THE LIFETIME OF ADDED CARRIERS IN INSB [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (12): : 985 - 990

[16] RECOMBINATION OF EXCESS CARRIERS IN SEMICONDUCTORS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1957, 12 (12) : 1338 - 1344

[17] ELECTRON-HOLE RECOMBINATION STATISTICS IN SEMICONDUCTORS THROUGH FLAWS WITH MANY CHARGE CONDITIONS [J]. PHYSICAL REVIEW, 1958, 109 (04): : 1103 - 1115

[18] SHOCKLEY W, 1952, PHYS REV, V87, P825

[19] DISTRIBUTION COEFFICIENTS AND CARRIER MOBILITIES IN INSB [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) : 559 - 563

[20] SIMPLE APPARATUS FOR MAINTAINING TEMPERATURES BETWEEN 77-DEGREES-K AND 300-DEGREES-K [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1957, 28 (10) : 836 - 837

[11] AUGER EFFECT IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 73 - 75

[12] LANDSBERG PT, 1957, P PHYS SOC LONDON B, V70, P283

[13] LAX M, 1959, J PHYS CHEM SOLIDS, V8, P166

[14] LAX M, 1956, B AM PHYS SOC, V1, P128

[15] THE LIFETIME OF ADDED CARRIERS IN INSB [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (12): : 985 - 990

[16] RECOMBINATION OF EXCESS CARRIERS IN SEMICONDUCTORS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1957, 12 (12) : 1338 - 1344

[17] ELECTRON-HOLE RECOMBINATION STATISTICS IN SEMICONDUCTORS THROUGH FLAWS WITH MANY CHARGE CONDITIONS [J]. PHYSICAL REVIEW, 1958, 109 (04): : 1103 - 1115

[18] SHOCKLEY W, 1952, PHYS REV, V87, P825

[19] DISTRIBUTION COEFFICIENTS AND CARRIER MOBILITIES IN INSB [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) : 559 - 563

[20] SIMPLE APPARATUS FOR MAINTAINING TEMPERATURES BETWEEN 77-DEGREES-K AND 300-DEGREES-K [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1957, 28 (10) : 836 - 837