GROWTH AND CHARACTERIZATION OF ALUMINUM-OXIDE THIN-FILMS DEPOSITED FROM VARIOUS SOURCE MATERIALS BY ATOMIC LAYER EPITAXY AND CHEMICAL VAPOR-DEPOSITION PROCESSES

被引：74

作者：

HILTUNEN, L ^{[1
]}

KATTELUS, H ^{[1
]}

LESKELA, M ^{[1
]}

MAKELA, M ^{[1
]}

NIINISTO, L ^{[1
]}

NYKANEN, E ^{[1
]}

SOININEN, P ^{[1
]}

TIITTA, M ^{[1
]}

机构：

[1] HELSINKI UNIV TECHNOL,INORGAN & ANALYT CHEM LAB,SF-02150 ESPOO,FINLAND

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1991年 / 28卷 / 04期

关键词：

D O I：

10.1016/0254-0584(91)90073-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Aluminium oxide thin films were prepared by the ALE process using AlCl3 and Al(OR)3 (R = Et,Pr) as aluminium source and H2O, O2 or various aliphatic alcohols as oxygen source. The process was also operated in the CVD mode and the deposition rates and mechanisms were compared. The films were characterized by Auger and XRF spectrometries for trace element impurities while the chloride residues were quantitatively determined by chemical analysis. FTIR was used to study the residual OH groups. The measured electrical constants and environmental stability indicate that the films are suitable for practical applications as insulating and protective layers.

引用

页码：379 / 388

页数：10