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CHARACTERIZATION OF THE RESPONSE OF A DOUBLE SIDE M-STRIP SILICON DETECTOR TO X-RAYS IN THE DIAGNOSTIC ENERGY-RANGE
被引:9
作者:
BANDETTINI, A
BENCIVELLI, W
BERTOLUCCI, E
BOTTIGLI, U
CONTI, M
DELGUERRA, A
FANTACCI, ME
RANDACCIO, P
ROSSO, V
RUSSO, P
STEFANINI, A
机构:
[1] UNIV PISA,IST PATOL SPECIALE MED & METODOL CLIN,I-56100 PISA,ITALY
[2] INFN,PISA,ITALY
[3] INFN,NAPLES,ITALY
[4] INFN,FERRARA,ITALY
[5] INFN,CAGLIARI,ITALY
[6] UNIV NAPLES,DIPARTIMENTO FIS,I-80138 NAPLES,ITALY
[7] UNIV FERRARA,DIPARTIMENTO FIS,I-44100 FERRARA,ITALY
[8] UNIV CAGLIARI,DIPARTIMENTO FIS,I-09100 CAGLIARI,ITALY
关键词:
D O I:
10.1109/23.256697
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
We are investigating the use of a double side mu-strip silicon crystal for X-ray detection. The detector is 300 mum thick and the read-out pitch is 100 mum for both sides. It operates in capacitive charge division mode by means of floating strips between read-out strips. The detector has been irradiated by Am-241 and Cd-109 sources. Different zones within the 100 mum read-out, pitch have been individually exposed. Thus, the following characteristics have been studied as a function of the impact point of the photon: (a) the charge collection mechanism; (b) the relative detection efficiency; (c) the energy resolution, (d) the spatial resolution. The absolute efficiency of the detector has also been measured at three energy values.
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页码:983 / 986
页数:4
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