DEVELOPMENT AND PERFORMANCE OF DOUBLE SIDED SILICON STRIP DETECTORS

被引:28
作者
BATIGNANI, G
BOSISIO, L
FOCARDI, E
FORTI, F
GIORGI, MA
MONETA, L
PARRINI, G
TONELLI, G
TRIGGIANI, G
机构
[1] SCUOLA NORMALE SUPER PISA,I-56100 PISA,ITALY
[2] UNIV PISA,I-56100 PISA,ITALY
[3] UNIV FLORENCE,I-50121 FLORENCE,ITALY
[4] NAPLES UNIV,I-80138 NAPLES,ITALY
关键词
D O I
10.1016/0168-9002(91)91017-P
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Microstrip silicon detectors with orthogonal readout on opposite sides have been designed and fabricated. The active area of each device is 25 cm2 and the strip pitch is 25-mu-m on the junction side and 50-mu-m on the opposite ohmic side. A space resolution of 15-mu-m on the junction side (100-mu-m readout pitch) and 24-mu-m on the ohmic side (200-mu-m readout pitch) has been measured. We also report on AC-coupling chips, designed and fabricated in order to allow AC connection of the strips to the amplifiers. These chips are 6.4 x 5.0 mm2 and have 100-mu-m pitch. Both AC-couplers and detectors have been installed as part of the ALEPH minivertex.
引用
收藏
页码:160 / 164
页数:5
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