USE OF ULTRA-THIN SEMICONDUCTIVE LAYERS AS PASSIVATION IN MICROSTRIP GAS-CHAMBERS

被引：14

作者：

BRONS, S

BRUCKNER, W

HEIDRICH, M

KONOROV, I

PAUL, S

机构：

[1] Max Planck Institut für Kernphysik, Heidelberg

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1994年 / 342卷 / 2-3期

关键词：

D O I：

10.1016/0168-9002(94)90268-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have investigated the properties of thin copper and germanium layers in view of their use in microstrip gas chambers. It was found that ultra thin germanium layers with thicknesses of about 100 A provide surface resistivities in the order of 10(11)-10(14) OMEGA/0. Such layers evaporated onto the microstructure of microstrip gas chambers manufactured on plastic or glass supports lead to a gain stabilization of these detectors up to very.high particle fluxes.

引用

页码：411 / 415

页数：5

共 8 条

[1] RESULTS FROM THE 1ST USE OF MICROSTRIP GAS CHAMBERS IN A HIGH-ENERGY PHYSICS EXPERIMENT [J].