N-CHANNEL NARROW GAP CHARGE-COUPLED-DEVICES USING ELECTRON-BEAM LITHOGRAPHY

被引：2

作者：

HASHIMOTO, N ^{[1
]}

SAITO, N ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI 185,TOKYO,JAPAN

来源：

关键词：

D O I：

10.1016/0040-6090(75)90009-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：89 / 93

页数：5

共 7 条

[1] ELECTRON RESISTS FOR MICROCIRCUIT AND MASK PRODUCTION [J].

HATZAKIS, M .

KUHN, M .

[3] CHARGE-TRANSFER IN OVERLAPPING GATE CHARGE-COUPLED DEVICES [J].

MOHSEN, AM ;

MCGILL, TC ;

MEAD, CA .

[4]

NISHIMATSU S, TO BE PUBLISHED

SNOW, EH ;

GROVE, AS ;

FITZGERALD, DJ .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (07) :1168-+

[6]

THIBAULT LR, 1972, 5TH INT C EL ION BEA

[7]

TOMURA T, 1970, 7TH C INT MICR EL GR