APPLICATION OF THE OPTOGALVANIC METHOD FOR DETERMINING THE THRESHOLD ENERGY OF SPUTTERING

被引：3

作者：

FUJIMAKI, S ^{[1
]}

ADACHI, Y ^{[1
]}

HIROSE, C ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,RESOURCES UTILIZAT RES LAB,4259 NAGATSUTA,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

APPLIED SPECTROSCOPY | 1987年 / 41卷 / 07期

关键词：

D O I：

10.1366/0003702874447662

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：1243 / 1245

页数：3

共 9 条

[1]

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[2]

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FUJIMAKI, S ;

ADACHI, Y ;

HIROSE, C .

APPLIED SPECTROSCOPY, 1987, 41 (04) :567-572

[4] FULL-PLANE THRESHOLD ENERGIES FOR CATHODE SPUTTERING OF METALS WITH AR+ IONS [J].

HENSCHKE, EB ;

DERBY, SE .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2458-&

[5]

HOFER WO, 1986, P NATO ADV STUDY I E, P1

[6] THE HOLLOW-CATHODE EFFECT AND THE THEORY OF GLOW DISCHARGES [J].

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VONENGEL, A .

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[7]

NAKAJIMA T, 1983, J PHYS, V44, P425

[8] SPUTTERING YIELDS AT VERY LOW BOMBARDING ION ENERGIES [J].

STUART, RV ;

WEHNER, GK .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (07) :2345-&

[9] LOW YIELD SPUTTERING OF MONO-CRYSTALLINE METALS [J].

VANVEEN, A ;

FLUIT, JM .

NUCLEAR INSTRUMENTS & METHODS, 1980, 170 (1-3) :341-346

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