GROWTH OF ALTERNATING (100)/(111)-ORIENTED II-VI REGIONS FOR QUASI-PHASE-MATCHED NONLINEAR-OPTICAL DEVICES ON GAAS SUBSTRATES

被引：35

作者：

ANGELL, MJ ^{[1
]}

EMERSON, RM ^{[1
]}

HOYT, JL ^{[1
]}

GIBBONS, JF ^{[1
]}

EYRES, LA ^{[1
]}

BORTZ, ML ^{[1
]}

FEJER, MM ^{[1
]}

机构：

[1] STANFORD UNIV,EL GINZTON LAB,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 23期

关键词：

D O I：

10.1063/1.111362

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a technique for fabricating laterally patterned [111] and [100]-oriented regions of CdTe on GaAs by metalorganic chemical vapor deposition. Patterning of the crystal orientation is important for quasi-phase-matched nonlinear optical frequency conversion in semiconductor waveguides. Scanning electron micrographs and x-ray diffraction analysis are used to confirm the presence of [111]/[100] grating structures. The CdTe layer is shown to be a suitable template to pattern the orientation of subsequently grown wide-band-gap films of ZnSe and ZnTe.

引用

页码：3107 / 3109

页数：3

共 14 条

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