HOT-ELECTRON EMISSION FROM SILICON UNDER PULSED LASER EXCITATION

被引：3

作者：

BENSOUSSAN, M

MOISON, JM

机构：

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC7期

关键词：

D O I：

10.1051/jphyscol:1981717

中图分类号：

学科分类号：

摘要：

引用

页码：149 / 153

页数：5

共 16 条

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[2]

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[7] LASER-INDUCED INFRARED ABSORPTION IN SILICON [J].

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[9] LASER-INDUCED ELECTRON EMISSION FROM SOLIDS . MANY-PHOTON PHOTOELECTRIC EFFECTS AND THERMIONIC EMISSION [J].

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[10]

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