HIGH-FREQUENCY ADMITTANCE OF SPACE-CHARGE-LIMITED SOLID-STATE DIODES

被引:9
作者
VANDERZIEL, A
HSU, ST
机构
来源
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1966年 / 54卷 / 09期
关键词
D O I
10.1109/PROC.1966.5073
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:1194 / +
页数:1
相关论文
共 2 条
[1]   CHARACTERISTICS OF THE SPACE-CHARGE-LIMITED DIELECTRIC DIODE AT VERY HIGH FREQUENCIES [J].
SHAO, J ;
WRIGHT, GT .
SOLID-STATE ELECTRONICS, 1961, 3 (3-4) :291-303
[2]   TRANSIT TIME EFFECTS IN SPACE-CHARGE-LIMITED SILICON MICROWAVE DIODE [J].
WRIGHT, GT .
SOLID-STATE ELECTRONICS, 1966, 9 (01) :1-&