METALLIZATION SYSTEMS FOR SILICON INTEGRATED CIRCUITS

被引：71

作者：

TERRY, LE

WILSON, RW

机构：

[1] Motorola Inc., Semiconductor Products Division, Phoenix, Ariz.

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 09期

关键词：

D O I：

10.1109/PROC.1969.7339

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An investigation into single and composite layered metallization systems is described with respect to their limitations, possible failure mechanisms, and problems encountered in fabrication. Systems investigated include metals such as chromium, titanium, tungsten, and molybdenum in conjunction with gold. Comparisons are made to conventional aluminum with respect to ohmic contact to silicon, metallurgical reactions, behavior in adverse environmental conditions, method of deposition and processing difficulties. © 1969 IEEE. All rights reserved.

引用

页码：1580 / &

共 12 条

[1]

[Anonymous], 1957, RECTIFYING SEMICONDU

[2] ELECTROMIGRATION FAILURE MODES IN ALUMINUM METALLIZATION FOR SEMICONDUCTOR DEVICES [J].