EXTRACTION OF THE INP/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTOR SMALL-SIGNAL EQUIVALENT-CIRCUIT

被引：65

作者：

SPIEGEL, SJ ^{[1
]}

RITTER, D ^{[1
]}

HAMM, RA ^{[1
]}

FEYGENSON, A ^{[1
]}

SMITH, PR ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 06期

关键词：

D O I：

10.1109/16.387237

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An extraction technique for determining the small-signal equivalent circuit model of an InP/GaInAs heterojunction bipolar transistor is presented. The equivalent circuit includes the extrinsic base collector capacitance and extrinsic base resistance, It is clearly indicated which elements are uniquely determined, and which elements are estimated.

引用

页码：1059 / 1064

页数：6

共 6 条

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[5] ROLE OF HOT-ELECTRON BASE TRANSPORT IN ABRUPT EMITTER INP GA0.43IN0.53AS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

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