ROLE OF HOT-ELECTRON BASE TRANSPORT IN ABRUPT EMITTER INP GA0.43IN0.53AS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：12

作者：

RITTER, D ^{[1
]}

HAMM, RA ^{[1
]}

FEYGENSON, A ^{[1
]}

SMITH, PR ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 22期

关键词：

D O I：

10.1063/1.111380

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The high frequency performance of InP/Ga0.47In0.53As heterojunction bipolar transistors (HBTs) with a varying base thickness was measured. The diffusion constant of minority carrier electrons in the heavily doped base was found to be 105 cm2/s. It is demonstrated that the short base transit times in fast InP/Ga0.47In0.53As HBTs is mainly due to the high value of the diffusion constant of thermalized electrons. The contribution of hot electron ballistic transport is relatively small.

引用

页码：2988 / 2990

页数：3

共 11 条

[1]

ASBECK PM, 1991, HIGH SPEED SEMICONDU, P335

[2]

DODD PE, 1992, APPL PHYS LETT, V61, P2683

[3] INGAAS INP COMPOSITE COLLECTOR HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J].