DIFFUSIVE BASE TRANSPORT IN NARROW BASE INP/GA0.47IN0.53AS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：49

作者：

RITTER, D ^{[1
]}

HAMM, RA ^{[1
]}

FEYGENSON, A ^{[1
]}

PANISH, MB ^{[1
]}

CHANDRASEKHAR, S ^{[1
]}

机构：

[1] AT&T BELL LABS, CRAWFORD HILL LAB, HOLMDEL, NJ 07733 USA

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 26期

关键词：

D O I：

10.1063/1.105698

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The common emitter current gain of InP/Ga0.47In0.53As heterojunction bipolar transitors having a base doping level of 7 X 10(19) cm-3 is found to increase monotonically with decreasing base thickness in the range of 200-1000 angstrom. The variation of the gain with base thickness W(B) is proportional to 1/W(B)2, as expected for diffusive base transport, and a high injection efficiency.

引用

页码：3431 / 3433

页数：3

共 30 条

[1] ANKRI D, 1982, ELECTRON LETT, V18, P751
[2] ASBECK PM, 1991, HIGH SPEED SEMICONDU, P335
[3] 10 GBIT/S BIPOLAR LASER DRIVER
BANU, M
JALALI, B
NOTTENBURG, R
HUMPHREY, DA
MONTGOMERY, RK
HAMM, RA
PANISH, MB
[J]. ELECTRONICS LETTERS, 1991, 27 (03) : 278 - 280
[4] BERTHOLD K, 1988, APPL PHYS LETT, V27, P2247
[5] RESONANT TUNNELING SPECTROSCOPY OF HOT MINORITY ELECTRONS INJECTED IN GALLIUM-ARSENIDE QUANTUM-WELLS
CAPASSO, F
SEN, S
CHO, AY
HUTCHINSON, AL
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (14) : 930 - 932
[6] 4 GBIT/S PIN/HBT MONOLITHIC PHOTORECEIVER
CHANDRASEKHAR, S
DENTAI, AG
JOYNER, CH
JOHNSON, BC
GNAUCK, AH
QUA, GJ
[J]. ELECTRONICS LETTERS, 1990, 26 (22) : 1880 - 1882
[7] SUBPICOSECOND INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS
CHEN, YK
NOTTENBURG, RN
PANISH, MB
HAMM, RA
HUMPHREY, DA
[J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (06) : 267 - 269
[8] MICROWAVE NOISE PERFORMANCE OF INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS
CHEN, YK
NOTTENBURG, RN
PANISH, MB
HAMM, RA
HUMPHREY, DA
[J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (10) : 470 - 472
[9] COMPARISON OF COMPOSITIONALLY GRADED TO ABRUPT EMITTER-BASE JUNCTIONS USED IN THE HETEROJUNCTION BIPOLAR-TRANSISTOR
ENQUIST, PM
RAMBERG, LP
EASTMAN, LF
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) : 2663 - 2669
[10] AN INVESTIGATION OF THE EFFECT OF GRADED LAYERS AND TUNNELING ON THE PERFORMANCE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
GRINBERG, AA
SHUR, MS
FISCHER, RJ
MORKOC, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1758 - 1765

← 1 2 3 →