MICROWAVE NOISE PERFORMANCE OF INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS

[1] Asbeck P. M., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P864

[2] HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE AND MILLIMETER-WAVE INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) : 2571 - 2579

[3] BAYRAKTAROGLU B, 1987, TECH DIG IEEE MTTS S, P969

[4] 0.1-MU-M GATE-LENGTH PSEUDOMORPHIC HEMTS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (10) : 489 - 491

[5] SUBPICOSECOND INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (06) : 267 - 269

[6] COOKE HF, 1963, SOLID STATE DES, V4, P137

[7] ULTRAHIGH BE DOPING OF GA0.47IN0.53AS BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1989, 54 (25) : 2586 - 2588

[8] LIMITATIONS OF NIELSENS AND RELATED NOISE EQUATIONS APPLIED TO MICROWAVE BIPOLAR-TRANSISTORS, AND A NEW EXPRESSION FOR FREQUENCY AND CURRENT DEPENDENT NOISE-FIGURE [J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 191 - 196

[9] SURFACE-STATE RELATED L/F NOISE IN P-N JUNCTIONS AND MOS TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1968, 12 (09) : 287 - +

[10] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[1] Asbeck P. M., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P864

[2] HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE AND MILLIMETER-WAVE INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) : 2571 - 2579

[3] BAYRAKTAROGLU B, 1987, TECH DIG IEEE MTTS S, P969

[4] 0.1-MU-M GATE-LENGTH PSEUDOMORPHIC HEMTS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (10) : 489 - 491

[5] SUBPICOSECOND INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (06) : 267 - 269

[6] COOKE HF, 1963, SOLID STATE DES, V4, P137

[7] ULTRAHIGH BE DOPING OF GA0.47IN0.53AS BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1989, 54 (25) : 2586 - 2588

[8] LIMITATIONS OF NIELSENS AND RELATED NOISE EQUATIONS APPLIED TO MICROWAVE BIPOLAR-TRANSISTORS, AND A NEW EXPRESSION FOR FREQUENCY AND CURRENT DEPENDENT NOISE-FIGURE [J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 191 - 196

[9] SURFACE-STATE RELATED L/F NOISE IN P-N JUNCTIONS AND MOS TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1968, 12 (09) : 287 - +

[10] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25