HIGH-TEMPERATURE OXIDATION OF COPPER WITH UP TO 4.1-WT PERCENT SI

Oxidation of Cu-Si alloys with up to 4.1 wt.% Si in air is examined between 700 and 950°C. Five types of oxidation behaviour are described, ranging from subscales without inner oxide films to a continuous SiO2 film at the alloy-CuO interface. Breaking up of inner oxide films at low Si concentrations, preferential oxidation of copper at higher Si concentrations and the effect of selective pre-oxidation of Si are discussed. SiO2 is more permeable for Cu than for Si. © 1969.