HIGH-TEMPERATURE OXIDATION OF COPPER WITH UP TO 4.1-WT PERCENT SI

被引：10

作者：

KAPTEIJN, J

COUPERUS, SA

MEIJERING, JL

机构：

[1] Metallurgical Laboratory, Technical University, Delft

来源：

ACTA METALLURGICA | 1969年 / 17卷 / 10期

关键词：

D O I：

10.1016/0001-6160(69)90147-3

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

Oxidation of Cu-Si alloys with up to 4.1 wt.% Si in air is examined between 700 and 950°C. Five types of oxidation behaviour are described, ranging from subscales without inner oxide films to a continuous SiO2 film at the alloy-CuO interface. Breaking up of inner oxide films at low Si concentrations, preferential oxidation of copper at higher Si concentrations and the effect of selective pre-oxidation of Si are discussed. SiO2 is more permeable for Cu than for Si. © 1969.

引用

页码：1311 / +

页数：1