ELECTRIC-FIELD DOMAINS IN SUPERLATTICES - A COMPARISON OF TRANSPORT AND OPTICAL-GENERATION

被引：7

作者：

GRAHN, HT

MULLER, W

VONKLITZING, K

PLOOG, K

机构：

[1] Max-Planck-Institut für Festkörperforschung, W-7000 Stuttgart 80

来源：

SURFACE SCIENCE | 1992年 / 267卷 / 1-3期

关键词：

Semiconductor Materials;

D O I：

10.1016/0039-6028(92)91204-O

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Electric-field domains in undoped and doped GaAs/AlAs superlattices are investigated by current-voltage characteristics and photoluminescence spectroscopy. The current-voltage characteristics of the doped superlattice without illumination exhibits the most regular structures. The current is limited by nonresonant tunneling at the domain boundary, which extends over 1-2 periods. At larger electric fields a domain originating from a partially occupied, second conduction subband is observed in the case of optical generation.

引用

页码：579 / 582

页数：4

共 4 条

[1] PERIODIC NEGATIVE CONDUCTANCE BY SEQUENTIAL RESONANT TUNNELING THROUGH AN EXPANDING HIGH-FIELD SUPERLATTICE DOMAIN [J].