OPTICAL FUNCTIONS OF SILICON AT ELEVATED-TEMPERATURES

被引:153
作者
JELLISON, GE
MODINE, FA
机构
[1] Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6030
关键词
D O I
10.1063/1.357378
中图分类号
O59 [应用物理学];
学科分类号
摘要
The optical functions of silicon have been measured accurately at elevated temperatures using the two-channel spectroscopic polarization modulation ellipsometer. The wavelength region covered is 240-840 nm (5.16-1.47 eV), and the temperature region covered is room temperature to 490 degrees C. Using this data, the refractive index n iind the extinction coefficient k are both parameterized as functions of temperature T and photon energy E for photon energies below the direct band edge of silicon (similar to 3.36 eV or 370 nm). In this range, n (E,T) can lie fit with five parameters, and k(E,T) can be fit with six parameters.
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页码:3758 / 3761
页数:4
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