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PALLADIUM SILICIDE FORMATION OBSERVED BY AUGER-ELECTRON SPECTROSCOPY
被引:46
作者
:
ROBINSON, GY
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
ROBINSON, GY
[
1
]
机构
:
[1]
UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
来源
:
APPLIED PHYSICS LETTERS
|
1974年
/ 25卷
/ 03期
关键词
:
D O I
:
10.1063/1.1655421
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:158 / 160
页数:3
相关论文
共 6 条
[1]
GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON
[J].
BOWER, RW
论文数:
0
引用数:
0
h-index:
0
BOWER, RW
;
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
MAYER, JW
.
APPLIED PHYSICS LETTERS,
1972,
20
(09)
:359
-&
[2]
STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES
[J].
BUCKLEY, WD
论文数:
0
引用数:
0
h-index:
0
BUCKLEY, WD
;
MOSS, SC
论文数:
0
引用数:
0
h-index:
0
MOSS, SC
.
SOLID-STATE ELECTRONICS,
1972,
15
(12)
:1331
-&
[3]
METALLURGICAL PROPERTIES AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE-SILICON CONTACTS
[J].
KIRCHER, CJ
论文数:
0
引用数:
0
h-index:
0
KIRCHER, CJ
.
SOLID-STATE ELECTRONICS,
1971,
14
(06)
:507
-+
[4]
AUGER-ELECTRON SPECTROSCOPY AND SPUTTER ETCHING OF NI-AU-GE ON N-GAAS
[J].
ROBINSON, GY
论文数:
0
引用数:
0
h-index:
0
ROBINSON, GY
;
JARVIS, NL
论文数:
0
引用数:
0
h-index:
0
JARVIS, NL
.
APPLIED PHYSICS LETTERS,
1972,
21
(10)
:507
-&
[5]
ROBINSON GY, 1974, 1973 IEEE INT EL DEV
[6]
KINETICS OF FORMATION OF HAFNIUM SILICIDES ON SILICON
[J].
ZIEGLER, JF
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ZIEGLER, JF
;
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
MAYER, JW
;
KIRCHER, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
KIRCHER, CJ
;
TU, KN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
TU, KN
.
JOURNAL OF APPLIED PHYSICS,
1973,
44
(09)
:3851
-3857
←
1
→
共 6 条
[1]
GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON
[J].
BOWER, RW
论文数:
0
引用数:
0
h-index:
0
BOWER, RW
;
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
MAYER, JW
.
APPLIED PHYSICS LETTERS,
1972,
20
(09)
:359
-&
[2]
STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES
[J].
BUCKLEY, WD
论文数:
0
引用数:
0
h-index:
0
BUCKLEY, WD
;
MOSS, SC
论文数:
0
引用数:
0
h-index:
0
MOSS, SC
.
SOLID-STATE ELECTRONICS,
1972,
15
(12)
:1331
-&
[3]
METALLURGICAL PROPERTIES AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE-SILICON CONTACTS
[J].
KIRCHER, CJ
论文数:
0
引用数:
0
h-index:
0
KIRCHER, CJ
.
SOLID-STATE ELECTRONICS,
1971,
14
(06)
:507
-+
[4]
AUGER-ELECTRON SPECTROSCOPY AND SPUTTER ETCHING OF NI-AU-GE ON N-GAAS
[J].
ROBINSON, GY
论文数:
0
引用数:
0
h-index:
0
ROBINSON, GY
;
JARVIS, NL
论文数:
0
引用数:
0
h-index:
0
JARVIS, NL
.
APPLIED PHYSICS LETTERS,
1972,
21
(10)
:507
-&
[5]
ROBINSON GY, 1974, 1973 IEEE INT EL DEV
[6]
KINETICS OF FORMATION OF HAFNIUM SILICIDES ON SILICON
[J].
ZIEGLER, JF
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ZIEGLER, JF
;
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
MAYER, JW
;
KIRCHER, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
KIRCHER, CJ
;
TU, KN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
TU, KN
.
JOURNAL OF APPLIED PHYSICS,
1973,
44
(09)
:3851
-3857
←
1
→