FREQUENCY-DEPENDENT CONDUCTIVITY OF INSULATING SI-P AND SI-AS NEAR THE METAL-INSULATOR-TRANSITION

被引：10

作者：

MIGLIUOLO, M ^{[1
]}

CASTNER, TG ^{[1
]}

机构：

[1] UNIV ROCHESTER, DEPT PHYS & ASTRON, ROCHESTER, NY 14627 USA

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.38.11593

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：11593 / 11601

页数：9

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