OBSERVATION OF THE APPROACH TO A POLARIZATION CATASTROPHE

[1] ALTROY FAD, 1956, PHYS REV, V103, P1671

[2] ALTSHULER BL, 1978, JETP LETT+, V27, P662

[3] CRITICAL BEHAVIOR OF COMPLEX DIELECTRIC-CONSTANT NEAR PERCOLATION THRESHOLD OF A HETEROGENEOUS MATERIAL [J]. PHYSICAL REVIEW LETTERS, 1977, 39 (19) : 1222 - 1225

[4] POLARIZABILITIES OF SHALLOW DONORS IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1974, 14 (12) : 1321 - 1324

[5] BHATT RN, UNPUBLISHED

[6] OBSERVATION OF A DONOR EXCITON BAND IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1979, 31 (09) : 611 - 616

[7] DIELECTRIC ANOMALY AND METAL-INSULATOR TRANSITION IN N-TYPE SILICON [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (26) : 1627 - 1630

[8] CASTNER TG, UNPUBLISHED

[9] Dubrov V.E., 1976, SOV PHYS JETP, V43, P1050

[10] DENSITY-FUNCTIONAL APPROACH TO METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (22) : 1569 - 1572

[1] ALTROY FAD, 1956, PHYS REV, V103, P1671

[2] ALTSHULER BL, 1978, JETP LETT+, V27, P662

[3] CRITICAL BEHAVIOR OF COMPLEX DIELECTRIC-CONSTANT NEAR PERCOLATION THRESHOLD OF A HETEROGENEOUS MATERIAL [J]. PHYSICAL REVIEW LETTERS, 1977, 39 (19) : 1222 - 1225

[4] POLARIZABILITIES OF SHALLOW DONORS IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1974, 14 (12) : 1321 - 1324

[5] BHATT RN, UNPUBLISHED

[6] OBSERVATION OF A DONOR EXCITON BAND IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1979, 31 (09) : 611 - 616

[7] DIELECTRIC ANOMALY AND METAL-INSULATOR TRANSITION IN N-TYPE SILICON [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (26) : 1627 - 1630

[8] CASTNER TG, UNPUBLISHED

[9] Dubrov V.E., 1976, SOV PHYS JETP, V43, P1050

[10] DENSITY-FUNCTIONAL APPROACH TO METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (22) : 1569 - 1572