INTERPLAY OF STRAIN AND CHEMICAL BONDING IN SURFACTANT MONOLAYERS

被引:48
作者
KAXIRAS, E [1 ]
机构
[1] HARVARD UNIV, DIV APPL SCI, CAMBRIDGE, MA 02138 USA
来源
EUROPHYSICS LETTERS | 1993年 / 21卷 / 06期
关键词
SOLID SURFACE STRUCTURE; THIN FILM GROWTH; STRUCTURE; AND EPITAXY;
D O I
10.1209/0295-5075/21/6/009
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We investigate the effects of competition between strength of chemical bonds and strain induced on the substrate for monolayers of group-V adsorbates on Si(111). A large number of structural configurations for three different group-V adsorbates were considered and analyzed from first-principles total-energy calculations. The comparisons provide insight into the stability of possible structural arrangements and the ability of these structures to promote pseudomorphic growth of heterostructures.
引用
收藏
页码:685 / 690
页数:6
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