MECHANICAL DAMAGE GETTERING EFFECT IN SI

[1] Friedel J., 1964, DISLOCATIONS

[2] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS .2. SURFACE DAMAGE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (07) : 645 - 649

[3] HU SM, 1977, Patent No. 4053335

[4] IKEDA M, 1970, 709 RES EL LAB

[5] KATZ LE, 1979, 156TH M EL SOC, P1235

[6] MAGEE TJ, 1979, 156TH M EL SOC, P1251

[7] MELLIARSMITH CM, 1977, TREATISE MATERIALS S, V11, P47

[8] ELIMINATION OF PROCESS-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SI WAFERS .2. SI-3 N-4 PROCESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) : 565 - 570

[9] A CAUSE AND CURE OF STACKING FAULTS IN SILICON EPITAXIAL LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) : 5020 - +

[10] ELIMINATION OF OXIDATION-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS .1. PHOSPHORUS DIFFUSION-INDUCED MISFIT DISLOCATIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1725 - 1729

[1] Friedel J., 1964, DISLOCATIONS

[2] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS .2. SURFACE DAMAGE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (07) : 645 - 649

[3] HU SM, 1977, Patent No. 4053335

[4] IKEDA M, 1970, 709 RES EL LAB

[5] KATZ LE, 1979, 156TH M EL SOC, P1235

[6] MAGEE TJ, 1979, 156TH M EL SOC, P1251

[7] MELLIARSMITH CM, 1977, TREATISE MATERIALS S, V11, P47

[8] ELIMINATION OF PROCESS-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SI WAFERS .2. SI-3 N-4 PROCESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) : 565 - 570

[9] A CAUSE AND CURE OF STACKING FAULTS IN SILICON EPITAXIAL LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) : 5020 - +

[10] ELIMINATION OF OXIDATION-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS .1. PHOSPHORUS DIFFUSION-INDUCED MISFIT DISLOCATIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1725 - 1729