RESONANCES IN TUNNELING BETWEEN QUANTUM-WELLS

被引:18
作者
HEBERLE, AP [1 ]
RUHLE, WW [1 ]
ALEXANDER, MGW [1 ]
KOHLER, K [1 ]
机构
[1] FRAUNHOFER INST APPL SOLID STATE PHYS,W-7800 FREIBURG,GERMANY
关键词
D O I
10.1088/0268-1242/7/3B/108
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Time-resolved photoluminescence measurements in the picosecond regime on GaAs/Al0.35Ga0.65As asymmetric double quantum well structures with perpendicular electric fields applied in both directions are reported. A large number of electron and hole resonances are detected. A splitting of the ground state resonances reveals the importance of excitonic effects. Longitudinal optical phonon assisted tunnelling plays a minor role for narrow quantum wells in comparison with impurity or interface roughness assisted transfer. Resonant electron tunnelling times depend exponentially on the square root of the effective barrier height and are an order of magnitude shorter than resonant hole tunnelling times.
引用
收藏
页码:B421 / B423
页数:3
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