WEAK-BEAM METHOD IN ELECTRON-MICROSCOPY .2. COMPARISON BETWEEN 1 MV AND 100 KV

被引：9

作者：

SANDSTRO.R ^{[1
]}

机构：

[1] ROY INST TECHNOL,DEPT THEORET PHYS,STOCKHOLM,SWEDEN

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 19卷 / 01期

关键词：

D O I：

10.1002/pssa.2210190106

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：83 / 91

页数：9

共 15 条

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[9] CRITICAL VOLTAGE EFFECT IN HIGH-VOLTAGE ELECTRON-MICROSCOPY [J].

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[10] DISSOCIATION OF DISLOCATIONS IN SILICON [J].

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