GROWTH OF EXTREMELY UNIFORM III-V COMPOUND SEMICONDUCTOR LAYERS BY LP-MOVPE BY APPLICATION OF THE GAS FOIL TECHNIQUE FOR SUBSTRATE ROTATION

In this study we will report on the first application of gas foil rotation in low pressure systems for growth of InP and GaAs based materials. Commerical reactors could be retrofitted with compatible designed susceptors allowing single rotation and planetary motion. The growth of GaAs/AlGaAs structures has been studied in the horizontal large scale low pressure reactor (5 X 2 inch wafer) using planetary motion of the wafers. Wafer-to-wafer uniformity of AlGaAs layer thickness of about 1% and compositional uniformity better than 0.4% have been achieved. InP and GaInAsP (lambda = 1.3-mu-m) have been grown under the same conditions yielding optimum material on the static susceptor. The thickness variation of these materials was less than 1.5%. The same numbers were found for dopant incorporation (SiH4) at an average concentration of 10(16) cm-3. Variation of lattice mismatch of GaInAs layers was less than 2 x 10(-4) over the wafer area. Photoluminescene wavelength variation of quaternary layers of less than 3 nm could be obtained.