PICOSECOND PHOTOINDUCED ABSORPTION AS A PROBE OF METASTABLE LIGHT-INDUCED DEFECTS IN INTRINSIC HYDROGENATED AMORPHOUS-SILICON

被引:19
作者
GUSTAFSON, TL
SCHER, H
ROBERTS, DM
COLLINS, RW
机构
关键词
D O I
10.1103/PhysRevLett.60.148
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:148 / 151
页数:4
相关论文
共 21 条
[1]  
AMER NM, 1984, HYDROGENATED AMORP B, P83
[2]  
CARLSON DE, 1984, HYDROGENATED AMORP D, P7
[3]   ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-SILICON [J].
DERSCH, H ;
STUKE, J ;
BEICHLER, J .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (01) :265-274
[4]   PHOTOINDUCED CHANGES IN GLOW-DISCHARGE-DEPOSITED AMORPHOUS SILICON - STAEBLER-WRONSKI EFFECT [J].
ELLIOTT, SR .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (04) :349-356
[5]  
GUSTAFSON TL, UNPUB
[6]   IMPLICATIONS OF RECENT DENSITY-OF-STATES MEASUREMENTS FOR OPTICAL AND TRANSPORT-PROPERTIES OF A-SI-H [J].
JACKSON, WB ;
TSAI, CC ;
KELSO, SM .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :281-290
[7]   SYSTEMATIC INVESTIGATION OF PICOSECOND PHOTOINDUCED ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON [J].
JACKSON, WB ;
DOLAND, C ;
TSAI, CC .
PHYSICAL REVIEW B, 1986, 34 (04) :3023-3026
[8]   EFFECT OF TEMPERATURE DURING ILLUMINATION ON ANNEALING OF METASTABLE DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J].
JACKSON, WB ;
STUTZMANN, M .
APPLIED PHYSICS LETTERS, 1986, 49 (15) :957-959
[9]  
JACKSON WR, COMMUNICATION
[10]   THERMALIZATION AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J].
ORENSTEIN, J ;
KASTNER, MA .
SOLID STATE COMMUNICATIONS, 1981, 40 (01) :85-89