DOPING DEPENDENCE OF THE ULTRAFAST THERMALIZATION AND RELAXATION OF HIGHLY PHOTOEXCITED CARRIERS IN BULK POLAR SEMICONDUCTORS

被引：10

作者：

HOHENESTER, U ^{[1
]}

SUPANCIC, P ^{[1
]}

KOCEVAR, P ^{[1
]}

ZHOU, XQ ^{[1
]}

LEMMER, U ^{[1
]}

CHO, GC ^{[1
]}

KUTT, W ^{[1
]}

KURZ, H ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST SEMICOND ELECTR,W-5100 AACHEN,GERMANY

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期

关键词：

D O I：

10.1088/0268-1242/7/3B/043

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Subpicosecond luminescence and transmission spectroscopy for a broad range of doping and optical excitation densities are used for a systematic study of thermalization and energy relaxation of highly photoexcited electrons and holes in bulk intrinsic, n- and p-doped GaAs and InP at room temperature. The measurements are complemented by an ensemble-Monte-Carlo analysis, including non-equilibrium phonons and plasmons as well as electron degeneracy.

引用

页码：B176 / B179

页数：4

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