ARF-EXCIMER-LASER-INDUCED EMISSION AND ABSORPTION-BANDS IN FUSED-SILICA SYNTHESIZED UNDER OXIDIZING CONDITIONS

被引：41

作者：

KUZUU, N ^{[1
]}

KOMATSU, Y ^{[1
]}

MURAHARA, M ^{[1
]}

机构：

[1] TOKAI UNIV,FAC ENGN,DEPT ELECT ENGN,HIRATSUKA,KANAGAWA 25912,JAPAN

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.45.2050

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ArF-excimer-laser-induced absorption and emission bands in type-III fused silica synthesized under oxidizing conditions were investigated. The fused silica irradiated with the ArF excimer laser shows an absorption band at 4.8 eV and an emission band at 1.9 eV, which are considered to be created by oxygen molecules dissolved in the glass. In addition to these bands, an absorption band at 2.0 eV ascribed to the nonbridging-oxygen hole center is observed. Solarization is enhanced strongly by annealing in He ambient. Based on these results, we proposed a model to describe the phenomena: H2O molecules bound to the = Si-OH structure by hydrogen bonds creates oxygen molecules which are considered to be precursors of the 4.8- and the 1.9-eV bands.

引用

页码：2050 / 2054

页数：5

共 34 条

[1] 2-PHOTON PROCESSES IN DEFECT FORMATION BY EXCIMER LASERS IN SYNTHETIC SILICA GLASS
ARAI, K
IMAI, H
HOSONO, H
ABE, Y
IMAGAWA, H
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (20) : 1891 - 1893
[2] O-2 MOLECULES DISSOLVED IN SYNTHETIC SILICA GLASSES AND THEIR PHOTOCHEMICAL-REACTIONS INDUCED BY ARF EXCIMER LASER-RADIATION
AWAZU, K
KAWAZOE, H
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) : 3584 - 3591
[3] Bruckner R., 1970, Journal of Non-Crystalline Solids, V5, P123, DOI 10.1016/0022-3093(70)90190-0
[4] DAVINE RAB, 1986, MRS S P, V61, P213
[5] DEFECT STRUCTURE OF GLASSES - SOME OUTSTANDING QUESTIONS IN REGARD TO VITREOUS SILICA
GRISCOM, DL
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 73 (1-3) : 51 - 77
[6] HAYASHI A, 1985, CERAMICS, V20, P274
[7] HAYASHI A, 1989, NEW CERAMICS, V2, P2
[8] Hetherington G, 1962, PHYS CHEM GLASSES-B, V3, P129
[9] Hyde J. F., 1942, U.S. Patent, Patent No. [2,272,342, 2272342]
[10] IMAI H, 1988, PHYSICS TECHNOLOGY A, P153

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