RECOMBINATION OF PHOTOGENERATED CARRIERS IN DOPED HYDROGENATED AMORPHOUS-SILICON

被引：10

作者：

HVAM, JM ^{[1
]}

BRODSKY, MH ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期

关键词：

D O I：

10.1051/jphyscol:19814119

中图分类号：

学科分类号：

摘要：

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页码：551 / 554

页数：4

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