INTERPRETATION OF SPUTTER DEPTH PROFILES BY MIXING SIMULATIONS

被引:17
作者
KUPRIS, G [1 ]
ROSSLER, H [1 ]
ECKE, G [1 ]
HOFMANN, S [1 ]
机构
[1] MAX PLANCK INST MET RES,D-70174 STUTTGART,GERMANY
来源
FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY | 1995年 / 353卷 / 3-4期
关键词
D O I
10.1007/BF00322057
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The interpretation of sputter depth profiles can be simplified by use of computer simulations. Distortions caused by mixing effects and distortions caused by the information depth of the analytical method have to be distinguished. Atomic mixing and the information depth distort the depth profile simultaneously. Therefore, it is necessary to take into consideration a superposition of both distortion effects. The sputtering of a GaAs/AlAs multilayer has been calculated on a personal computer with the binary collision approximation code T-DYN by Biersack and with an own layer model. A new computer code LAMBDA has been used for the investigation of the influence of the AES information depth in addition to atomic mixing and preferential sputtering. A comparison of the calculated and the measured depth profile explains the observed effects. Therefore conclusions can be drawn about the original elemental distribution in the sample from the measured depth profile.
引用
收藏
页码:307 / 310
页数:4
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