PHOTOLUMINESCENCE FROM ANODIZED AND THERMALLY OXIDIZED POROUS GERMANIUM

被引：64

作者：

MIYAZAKI, S

SAKAMOTO, K

SHIBA, K

HIROSE, M

机构：

[1] Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima

来源：

THIN SOLID FILMS | 1995年 / 255卷 / 1-2期

关键词：

GERMANIUM; LUMINESCENCE; NANOSTRUCTURES; OXIDATION;

D O I：

10.1016/0040-6090(94)05630-V

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A broad photoluminescence (PL) band at similar to 1.17 eV is observed far as-anodized porous Ge (PG) at room temperature. Oxidation at 600 degrees C induces a new intense PL band at similar to 2.15 eV whose spectral shape remains almost unchanged with progressive oxidation. Considering this result and the observed temperature dependence and decay time of the PL from thermally oxidized PG, it has been suggested that the radiative recombination through localized states is a possible pathway of the emission.

引用

页码：99 / 102

页数：4

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