ELECTRON-SPIN-RESONANCE AND OVERHAUSER SHIFT OF 2-DIMENSIONAL CONDUCTION ELECTRONS

Electron spin resonance of the two-dimensional electron gas in III-V semiconductor heterojunctions gives rise to a change of the magnetoresistivity ρxx. For heterojunctions based on the material combinations GaAs-AlGaAs, GaAs-GaInP and GaInAs-InP we determined the Landau level and magnetic field dependence of the g-factors to be the following: g(N,B) = g0 - c(N) + 1 2)B, where the parameters g0 and c depend on the material combination and also slightly on the actual sample. Hyperfine interaction between the spins of the two-dimensional conduction electrons and the lattice nuclei results in an Overhauser shift of the electron spin resonance, which allows the indirect study of nuclear spin relaxation and nuclear spin resonance of the lattice nuclei. © 1990.