CATASTROPHIC DEGRADATION IN GAAS LASER DIODES

被引：33

作者：

SHAW, DA

THORNTON, PR

机构：

来源：

SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 07期

关键词：

D O I：

10.1016/0038-1101(70)90088-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：919 / +

页数：1

共 10 条

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[2] INTERNAL SELF-DAMAGE OF GALLIUM ARSENIDE LASERS [J].

COOPER, DP ;

GOOCH, CH ;

SHERWELL, RJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1966, QE 2 (08) :329-+

[3]

DOBSON CS, 1967, GALLIUM ARSENIDE, P68

[4] MODIFICATION OF NEAR-FIELD PATTERN OF GAAS LASER BY MAGNETIC FIELD [J].

FOWLER, AB ;

WALKER, EJ .

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[5]

HILL MW, TO BE PUBLISHED

[6] CATASTROPHIC DEGRADATION IN GAAS INJECTION LASERS [J].

KRESSEL, H ;

MIEROP, H .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) :5419-&

[7] Cathodoluminescent Studies of Laser Quality GaAs [J].

Shaw, D. A. ;

Thornton, P. R. .

JOURNAL OF MATERIALS SCIENCE, 1968, 3 (05) :507-518

[8] CRYSTAL MOSAIC STRUCTURES AND LASING PROPERTIES OF GAAS LASER DIODES [J].

SHAW, DA ;

HUGHES, KA ;

NEVE, NFB ;

SULWAY, DV ;

THORNTON, PR .

SOLID-STATE ELECTRONICS, 1966, 9 (06) :664-&

[9]

THORNTON PR, 1968, SCANNING ELECTRON MI, P172

[10]

THORNTON PR, 1967, 9 IEEE S EL ION LAS

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