SEMIINSULATING GAAS MADE BY AS IMPLANTATION AND THERMAL ANNEALING

被引：5

作者：

CLAVERIE, A

NAMAVAR, F

LILIENTALWEBER, Z

DRESZER, P

WEBER, ER

机构：

[1] SPIRE CORP,BEDFORD,MA 01730

[2] UNIV CALIF BERKELEY LAWRENCES BERKELEY LAB,MSD,BERKELEY,CA 94720

[3] UNIV CALIF BERKELEY,BERKELEY,CA 94720

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 22卷 / 01期

关键词：

D O I：

10.1016/0921-5107(93)90220-H

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have demonstrated that it is possible to regrow amorphous layers created by high dose As implantation in GaAs by thermal annealing in order to obtain arsenic precipitates distributed in a GaAs matrix similarly to that observed in low temperature GaAs. The characteristics of the As precipitates can be monitored through appropriate selection of the implantation and annealing conditions. Electrical measurements show that dielectric-like resistivity of surface or buried GaAs lavers can be obtained by this method. Results on the growth of epilayers on these semi-insulating regions are also reported.

引用

页码：37 / 40

页数：4

共 14 条

[1]

BEAUVILLAIN J, 1992, J PHYS III, V2, P407, DOI 10.1051/jp3:1992138

[2] A1INAS-GAINAS HEMTS UTILIZING LOW-TEMPERATURE A1INAS BUFFERS GROWN BY MBE [J].