THE 2-WAY MEMORY EFFECT IN A 50 AT-PERCENT TI-40 AT-PERCENT NI-10 AT-PERCENT CU ALLOY

被引:15
作者
AIROLDI, G
RANUCCI, T
RIVA, G
SCIACCA, A
机构
[1] MILANO UNIV,IST NAZL FIS MAT,I-20133 MILAN,ITALY
[2] CNR,IST TECNOL MAT MET NON TRADIZ,I-20133 MILAN,ITALY
关键词
D O I
10.1088/0953-8984/7/19/005
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The two-way memory training across the B2 <--> B19 transformation of a 50 at. % Ti-40 at.% Ni-10 at.% Cu alloy has been investigated here following both the strain and the electrical resistance change. Training loops of the form (P --> M transformation --> strain --> shape recovery on reverse transformation) under applied stress levels of 51, 70.1, 89.2 and 108.3 MPa have been examined. The chief aim of the paper has been both to detect the electrical resistance change across the B2 <--> B19 transformation, which is linearly related to the strain, and to discuss the different contributions related to the electric transport properties. The results found here provide sound support for selecting the electrical resistance as a state control variable in a two-way memory effect device.
引用
收藏
页码:3709 / 3720
页数:12
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