BANDGAP SHIFTED INGAASP/INP QUANTUM-WELL WAVE-GUIDES USING MEV ION-IMPLANTATION

被引：22

作者：

HE, JJ ^{[1
]}

FENG, Y ^{[1
]}

KOTELES, ES ^{[1
]}

POOLE, PJ ^{[1
]}

DAVIS, M ^{[1
]}

DION, M ^{[1
]}

GOLDBERG, R ^{[1
]}

MITCHELL, I ^{[1
]}

CHARBONNEAU, S ^{[1
]}

机构：

[1] UNIV WESTERN ONTARIO,DEPT PHYS,LONDON,ON N6A 3K7,CANADA

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 24期

关键词：

OPTICAL WAVE-GUIDES; SEMICONDUCTOR QUANTUM WELLS; ION IMPLANTATION;

D O I：

10.1049/el:19951415

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A large blue shift of the bandgap 90 nm, in an InGaAsP/InP quantum well (QW) pin laser structure using a single-step MeV phosphorous ion implantation is reported. The absorption constant at the original band-edge was reduced from 110cm(-1) to only 4cm(-1). No excess loss in the waveguide due to the QW intermixing process was observed. Current/voltage measurements indicate that junction characteristics are well maintained, providing a means of producing side-by-side active and passive sections using a simple, single processing step on laser structures fabricated using standard growth techniques.

引用

页码：2094 / 2095

页数：2

共 6 条

[1]

CHARBONNEAU S, IN PRESS APPL PHYS L

[2] QUANTUM-WELL ELECTROABSORPTION MODULATORS AT 1.55 MU-M USING SINGLE-STEP SELECTIVE AREA CHEMICAL BEAM EPITAXIAL-GROWTH [J].