QUANTUM-WELL ELECTROABSORPTION MODULATORS AT 1.55 MU-M USING SINGLE-STEP SELECTIVE AREA CHEMICAL BEAM EPITAXIAL-GROWTH

被引：13

作者：

CHEN, Y

ZUCKER, JE

CHIU, TH

MARSHALL, JL

JONES, KL

机构：

[1] AT and T Bell Laboratories, Holmdel

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 01期

关键词：

D O I：

10.1063/1.107655

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a novel electroabsorption modulator operating at 1.55-mu-m fabricated by single-step selective area chemical beam epitaxy with no post-growth processing. The modulation depth is 14.5 dB for a voltage swing of 10 V. In addition, the modulator has a tunable absorption edge determined by the size of the growth mask opening.

引用

页码：10 / 12

页数：3

共 6 条

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