SELECTIVE AREA EPITAXY AND GROWTH OVER PATTERNED SUBSTRATES BY CHEMICAL BEAM EPITAXY

被引：25

作者：

TSANG, WT

YANG, L

WU, MC

CHEN, YK

机构：

[1] AT & T Bell Laboratories, Murray Hill

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 01期

关键词：

EPITAXY AND EPITAXIAL GROWTH; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19910003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Selective area epitaxy and growth over patterned substrate using chemical beam epitaxy (CBE) were investigated. Truly selective area epitaxy with no deposition over the SiO2 masks has been routinely obtained with excellent epilayer morphology. Uniform coverage was obtained for regrowth over etched mesas to form buried heterostructures. For growth over etched channels, very unique growth characteristics were obtained. Buried crescent stripes similar to those formed by liquid-phase epitaxy inside channels were also obtained by CBE. These growth characteristics demonstrated the unique capabilities of CBE.

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页码：3 / 5

页数：3

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