IRON-DOPED SEMI-INSULATING INP GROWN BY CHEMICAL BEAM EPITAXY

被引：27

作者：

TSANG, WT

SUDBO, AS

YANG, L

CAMARDA, R

LEIBENGUTH, RE

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 23期

关键词：

D O I：

10.1063/1.101120

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2336 / 2338

页数：3

共 16 条

[1] PRECIPITATION IN FE-DOPED SEMI-INSULATING INP EPITAXIAL LAYER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD) [J].

CHU, SNG ;

NAKAHARA, S ;

LONG, JA ;

RIGGS, VG ;

JOHNSTON, WD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) :2795-2798

[2] THE GROWTH OF IRON DOPED SEMI-INSULATING INP BY HYDRIDE VAPOR-PHASE EPITAXY IN A NITROGEN AMBIENT [J].

KARLICEK, RF .

JOURNAL OF CRYSTAL GROWTH, 1988, 91 (1-2) :33-38

[3]

KATO Y, 1987, I PHYS C SER, V83, P395

[4]

KUBOTA E, 1982, I PHYS C SER, V63, P31

[5]

LEE RN, 1977, MATER RES BULL, V12, P651, DOI 10.1016/0025-5408(77)90075-7

[6] GROWTH OF FE-DOPED SEMI-INSULATING INP BY MOCVD [J].

LONG, JA ;

RIGGS, VG ;

JOHNSTON, WD .

JOURNAL OF CRYSTAL GROWTH, 1984, 69 (01) :10-14

[7] ELECTRICAL CHARACTERIZATION OF FE-DOPED SEMI-INSULATING INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

MACRANDER, AT ;

LONG, JA ;

RIGGS, VG ;

BLOEMEKE, AF ;

JOHNSTON, WD .

APPLIED PHYSICS LETTERS, 1984, 45 (12) :1297-1298

[8] EUTECTIC PRECIPITATES IN FE-DOPED INP [J].

MIYAZAWA, S ;

KOIZUMI, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) :2335-2338

[9] SEMI-INSULATING PROPERTIES OF FE-DOPED INP [J].

MIZUNO, O ;

WATANABE, H .

ELECTRONICS LETTERS, 1975, 11 (05) :118-119

[10]

MORIOKA M, 1982, I PHYS C SER, V63, P37

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