CHARACTERIZATION OF SILVER-RELATED DEEP LEVELS IN SILICON

被引：18

作者：

BABER, N ^{[1
]}

GRIMMEISS, HG ^{[1
]}

KLEVERMAN, M ^{[1
]}

OMLING, P ^{[1
]}

IQBAL, MZ ^{[1
]}

机构：

[1] QUAID I AZAM UNIV,DEPT PHYS,SEMICOND PHYS LAB,ISLAMABAD,PAKISTAN

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 07期

关键词：

D O I：

10.1063/1.339425

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2853 / 2857

页数：5

共 16 条

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[7] A SENSITIVE AND INEXPENSIVE SIGNAL ANALYZER FOR DEEP LEVEL STUDIES [J].

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[9] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

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[10]

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